FW343 no.7555-1/6 features ? low on-resistance. ? ultrahigh-speed switching. ? composite type with an n-channel mosfet and a p- channel mosfet driving from a 4v supply voltage contained in a single package. ? high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit n-channel p-channel drain-to-source voltage v dss 30 --30 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 5 --4 a drain current (pw 10s) i d duty cycle 1% 5.5 --4.5 a drain current (pw 100ms) i d duty cycle 1% 7 --6.5 a drain current (pw 10 m s) i dp duty cycle 1% 20 --16 a allowable power dissipation p d mounted on a ceramic board (2000mm 2 5 0.8mm)1unit, pw 10s 1.8 w total dissipation p t mounted on a ceramic board (2000mm 2 5 0.8mm),pw 10s 2.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v marking : w343 continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7555 FW343 package dimensions unit : mm 2129 [FW343] d1003 ts im ta-100619 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n-channel and p-channel silicon mosfets motor driver applications 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 14 5 8 4.4 0.3 6.0 0.2 5.0 0.595 1.27 1.5 0.1 1.8max 0.43
FW343 no.7555-2/6 continued from preceding page. ratings parameter symbol conditions min typ max unit forward transfer admittance ? yfs ? v ds =10v, i d =5a 3.9 5.5 s r ds (on)1 i d =5a, v gs =10v 37 48 m w static drain-to-source on-state resistance r ds (on)2 i d =3a, v gs =4v 64 83 m w input capacitance ciss v ds =10v, f=1mhz 460 pf output capacitance coss v ds =10v, f=1mhz 95 pf reverse transfer capacitance crss v ds =10v, f=1mhz 75 pf turn-on delay time t d (on) see specified test circuit. 11 ns rise time t r see specified test circuit. 20 ns turn-off delay time t d (off) see specified test circuit. 30 ns fall time t f see specified test circuit. 20 ns total gate charge qg v ds =10v, v gs =10v, i d =5a 8.6 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =5a 2.0 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =5a 1.6 nc diode forward voltage v sd i s =5a, v gs =0 0.9 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.3 v forward transfer admittance ? yfs ? v ds =--10v, i d =--4a 3.5 5 s r ds (on)1 i d =--4a, v gs =--10v 53 69 m w static drain-to-source on-state resistance r ds (on)2 i d =--2a, v gs =--4v 105 147 m w input capacitance ciss v ds =--10v, f=1mhz 510 pf output capacitance coss v ds =--10v, f=1mhz 115 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 78 pf turn-on delay time t d (on) see specified test circuit. 11 ns rise time t r see specified test circuit. 55 ns turn-off delay time t d (off) see specified test circuit. 35 ns fall time t f see specified test circuit. 40 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--4a 11 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--4a 2.4 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--4a 1.7 nc diode forward voltage v sd i s =--4a, v gs =0 --0.9 --1.5 v electrical connection switching time test circuit [n-channel] [p-channel] pw=10 m s d.c. 1% p. g 50 w g s d i d =5a r l =3 w v dd =15v v out FW343 v in 10v 0v v in pw=10 m s d.c. 1% p. g 50 w g s d i d = --4a r l =3.75 w v dd = --15v v out FW343 v in 0v --10v v in 8765 1234 (top view) 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1
FW343 no.7555-3/6 10 7 5 3 2 100 0.001 2 0.01 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 1.0 0.1 2 10 10 2 100 7 5 3 1000 7 5 3 2 20 40 60 80 100 1 2 3 4 5 6 7 10 9 8 0 --60 --40 --20 0 20 40 60 80 100 120 140 r ds (on) -- v gs it04959 1 2 3 4 5 0 0 0.4 0.8 1.0 0.2 0.6 i d -- v ds v gs =2.0v 2.5v 3.0v 3.5v it04957 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d -- v gs v ds =10v 25 c --25 c ta=75 c it04958 r ds (on) -- ta it04960 0 i d =5a, v gs =10v i d =3a, v gs =4v [nch] [nch] [nch] [nch] [nch] [nch] [nch] [nch] sw time -- i d t d (on) t d (off) t r t f it04963 ciss, coss, crss -- v ds it04961 0.001 0.01 23 57 0.1 23 57 1.0 23 57 10 23 57 0.1 23 57 1.0 23 57 10 0.01 2 0.1 7 5 3 2 7 5 3 2 7 5 3 1.0 10 ? y fs ? -- i d v ds =10v ta= --25 c it04962 0 0.2 0.4 0.6 0.8 1.0 1.4 1.2 i f -- v sd v gs =0 --25 c 25 c ta=75 c 0 5 10 15 20 25 30 f=1mhz ciss coss crss it04964 v dd =15v v gs =10v 75 c 6.0v 4.0v 8.0v 10.0v 25 c gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a drain current, i d -- a forward transfer admittance, ? y fs ? -- s static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v forward current, i f -- a ambient temperature, ta -- c 012345678910 0 50 100 150 200 ta=25 c 5a i d =3a
FW343 no.7555-4/6 it04972 0.1 2 7 5 3 2 7 5 3 1.0 10 50 100 150 200 0 --60 --40 --20 0 20 40 60 80 100 120 160 140 0 --4 --8 --12 --16 --2 --6 --10 --14 50 100 150 200 250 300 0 -- 1 -- 2 -- 3 -- 4 -- 5 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 v gs -- qg it04965 0 2 4 6 8 10 0123456789 a s o it04966 r ds (on) -- ta r ds (on) -- v gs it04969 it04970 i d -- v gs --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 0 i d -- v ds it04967 it04968 [pch] [pch] [nch] [nch] [pch] [pch] v ds = --10v 75 c ta= --25 c v gs = --2.5v --10.0v -- 4.0v -- 3.5v -- 3.0v --8.0v i d = --2a --4a ta=25 c it04971 ? y fs ? -- i d i f -- v sd [pch] [pch] v ds = --10v 75 c 25 c ta= --25 c v ds =10v i d =5a --4.5v -- 6.0v 25 c i d = --2a, v gs = --4v i d = --4a, v gs = --10v --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a 0.01 0.1 1.0 23 57 23 57 23 57 23 10 5 0.01 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 5 3 2 i dp =20a i d =5a 100ms dc operation 1ms 10ms 10s <10 m s 100 s ta=25 c single pulse mounted on a ceramic board(2000mm 2 5 0.8mm) 1unit operation in this area is limited by r ds (on). 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --25 c 25 c ta=75 c v gs =0 --0.001 2 --0.01 --0.1 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 --1.0 --10
FW343 no.7555-5/6 024681012 0 -- 2 -- 4 -- 6 -- 8 --10 10 100 2 7 5 3 2 3 --0.1 23 57 --1.0 23 57 --10 ciss, coss, crss -- v ds sw time -- i d it04973 it04974 [pch] [pch] t d (on) t d (off) t r t f v gs -- qg v ds = --10v i d = --4a it04975 a s o it04976 [pch] [pch] p d -- ta it04977 v dd = --15v v gs = --10v drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w 0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.5 2.0 1.8 2.2 mounted on a ceramic board(2000mm 2 5 0.8mm) pw 10s 1unit total dissipation --0.01 --0.1 --1.0 --10 5 23 23 57 23 57 23 57 --0.01 --0.1 --1.0 --10 7 5 3 2 7 5 3 2 7 5 3 2 3 2 100ms dc operation 100 s 1ms 10ms 10s i dp = --16a <10 m s i d = --4a ta=25 c single pulse mounted on a ceramic board(2000mm 2 5 0.8mm) 1unit operation in this area is limited by r ds (on). 3 100 7 5 3 2 7 5 1000 0 --5 --10 --15 --20 --25 --30 ciss coss crss f=1mhz
FW343 no.7555-6/6 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of december, 2003. specifications and information herein are subject to change without notice. ps
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